FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET
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Stock Offer (Hot Sell)
FQP30N06 60V N-Channel MOSFET
General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V • Low gate charge ( typical 19 nC) • Low Crss ( typical 40 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
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| Product Tags: multi emitter transistor silicon power transistors |
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