FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet
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– Pulsed FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET switching power mosfet
Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications ►Battery management ►Load switch ► Battery protection
General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Absolute Maximum Ratings
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Product Tags: multi emitter transistor silicon power transistors |
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