P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

Model Number	P3NK90ZFP
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	7000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 900 V 3A (Tc) 25W (Tc) Through Hole TO-220FP
Drain-source Voltage	900 V
Drain-gate Voltage	900 V
Gate- source Voltage	± 30 V
Gate source ESD	4000 V
Peak Diode Recovery voltage slope	4.5 V/ns
Operating Junction Temperature	-55 to 150 °C

Detailed Product Description

STP3NK90Z - STP3NK90ZFP

STD3NK90Z - STD3NK90Z-1

N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™Power MOSFET

• TYPICAL R_DS(on) = 4.1 Ω

• EXTREMELY HIGH dv/dt CAPABILITY

• 100% AVALANCHE TESTED

• GATE CHARGE MINIMIZED

• VERY LOW INTRINSIC CAPACITANCES

• VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

• HIGH CURRENT, HIGH SPEED SWITCHING

• IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

• LIGHTING

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value			Unit
Symbol	Parameter	STP3NK90Z	STP3NK90ZFP	STD3NK90Z STD3NK90Z-1	Unit
V_DS	Drain-source Voltage (V_GS = 0)	900			V
V_DGR	Drain-gate Voltage (R_GS = 20 kΩ)	900			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuous) at T_C = 25°C	3	3 (*)	3	A
I_D	Drain Current (continuous) at T_C = 100°C	1.89	1.89 (*)	1.89	A
I_DM (•)	Drain Current (pulsed)	12	12 (*)	12	A
P_TOT	Total Dissipation at T_C = 25°C	90	25	90	W
	Derating Factor	0.72	0.2	0.72	W/°C
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150			°C

(•) Pulse width limited by safe operating area

(1) I_SD ≤3A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, Tj ≤ T_JMAX.

(*) Limited only by maximum temperature allowed

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

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ST202EBDR	16220	ST	14+	SOP
ST232BDR	16142	ST	16+	SOP
ST232CDR	16160	ST	16+	SOP
ST3232CDR	14306	ST	16+	SOP
ST62T01CM6	17772	ST	16+	SOP
STM795TM6F	6086	ST	16+	SOP
TL064CDR	14774	ST	15+	SOP
TL082ACDR	10742	ST	10+	SOP
UC3845BD1R2G	8438	ST	16+	SOP
VB025MSP	7082	ST	14+	SOP
R1100D121C-TR-F	9892	RICOH	16+	SON1408
SP690TCN-L/TR	28348	EXAR	10+	SOICN-8-HD
UC3843D8TR	17474	ON	11+	SOIC8
SST25VF064C-80-4I-S3AE	1958	SST	16+	SOIC8
SPB2026Z	908	RFMD	15+	SOF26
SP1003-01ETG	44000	LITTELFUS	14+	SOD882
SP1003-01DTG	43500	LITTELFUS	16+	SOD723
SF1200-TAP	18192	MIC	15+	SOD57
SBR0230T5-7	14630	DIODES	09+	SOD523
RB521S30T1G	68400	ON	14+	SOD523
RB751S-40	75000	ROCKWELL	16+	SOD523
UCLAMP3301H.TCT	23500	SEMTECH	16+	SOD523
SMP1321-079LF	16106	SKYWORKS	06+	SOD523
SMS7621-079LF	10652	SKYWORKS	12+	SOD523
SMS7630-079LF	7000	SKYWORKS	14+	SOD523
PZU13B2	51600		16+	SOD323F
SD107WS-7-F	47500	DIODES	16+	SOD323
SDM10K45-7-F	31800	DIODES	13+	SOD323
PZU12B2	49200		16+	SOD323

Product Tags: multi emitter transistor silicon power transistors

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