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P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

Model Number P3NK90ZFP
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 900 V 3A (Tc) 25W (Tc) Through Hole TO-220FP
Drain-source Voltage 900 V
Drain-gate Voltage 900 V
Gate- source Voltage ± 30 V
Gate source ESD 4000 V
Peak Diode Recovery voltage slope 4.5 V/ns
Operating Junction Temperature -55 to 150 °C
Detailed Product Description

 

STP3NK90Z - STP3NK90ZFP

STD3NK90Z - STD3NK90Z-1

N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK

Zener-Protected SuperMESH™Power MOSFET

 

• TYPICAL RDS(on) = 4.1 Ω

• EXTREMELY HIGH dv/dt CAPABILITY

• 100% AVALANCHE TESTED

• GATE CHARGE MINIMIZED

• VERY LOW INTRINSIC CAPACITANCES

• VERY GOOD MANUFACTURING REPEATIBILITY

 

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

 

APPLICATIONS

• HIGH CURRENT, HIGH SPEED SWITCHING

• IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

• LIGHTING

 

   

 

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP3NK90ZSTP3NK90ZFP

STD3NK90Z

STD3NK90Z-1

VDSDrain-source Voltage (VGS = 0)900V
VDGRDrain-gate Voltage (RGS = 20 kΩ)900V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C33 (*)3A
IDDrain Current (continuous) at TC = 100°C1.891.89 (*)1.89A
IDM (•)Drain Current (pulsed)1212 (*)12A
PTOTTotal Dissipation at TC = 25°C902590W
 Derating Factor0.720.20.72W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4000V
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150°C

(•) Pulse width limited by safe operating area

(1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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