STGW20NC60VD power mosfet module N-CHANNEL Very Fast PowerMESH IGBT

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Country/Region:china

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STGW20NC60VD power mosfet module N-CHANNEL Very Fast PowerMESH IGBT

Model Number	STGW20NC60VD
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	IGBT 600 V 60 A 200 W Through Hole TO-247-3
Collector-Emitter Voltage	600 V
Reverse Battery Protection	20 V
Gate-Emitter Voltage	± 20 V
Collector Current (pulsed)	100 A
Derating Factor	1.6 W/°C
Storage Temperature	-55 to 150 °C

Detailed Product Description

STGW20NC60VD

N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT

General Features

TYPE	V_CES	V_CE(sat) (Max) @25°C	I_C @100°C
STGW20NC60VD	600 V	< 2.5 V	30 A

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION UP TO 50 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE

■ LOWER C_RES /C_IES RATIO

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency applications.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ UPS

■ MOTOR DRIVERS

Absolute Maximum ratings

Symbol	Parameter	Value	Symbol
V_CES	Collector-Emitter Voltage (V_GS = 0)	600	V
V_ECR	Reverse Battery Protection	20	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at 25°C (#)	60	A
I_C	Collector Current (continuous) at 100°C (#)	30	A
I_CM (1)	Collector Current (pulsed)	100	A
If	Diode RMS Forward Current at T_C = 25°C	30	A
P_TOT	Total Dissipation at T_C = 25°C	200	W
	Derating Factor	1.6	W/°C
Tstg	Storage Temperature	– 55 to 150	°C
Tj	Operating Junction Temperature	– 55 to 150	°C

(1)Pulse width limited by max. junction temperature.

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

R2A15908SP	7631	RENESAS	16+	SOP-28
R4363	8626	HARRIS	16+	TO-263
R5F100LEAFA#V0	1933	RENESAS	12+	LQFP-64
RA30H2127M	1228	MITSUBISH	12+	H2S
RA35H1516M	1255	MITSUBISH	15+	DIP
RB160L-90 TE25	65000	ROHM	15+	SOD-106
RB160M-60	155000	ROHM	14+	SOD-123
RB450F	12000	ROHM	14+	SOT-323
RB551V-30	9000	ROHM	16+	SOD-323
RC4558DR	31000	TI	16+	SOP-8
RCLAMP0504F.TCT	64000	SEMTECH	15+	SOT-363
RCLAMP0504S.TCT	65000	SEMTECH	15+	SOT23-6
RCLAMP0524P.TCT	158000	SEMTECH	13+	SLP2510P8
RD06HVF1	2253	MITSUBISH	14+	TO-220
REF03GS	5373	ADI	16+	SOP-8
REF192FSZ	4252	AD	13+	SOP-8
REF192GSZ	6359	AD	16+	SOP-8
REF195GSZ	3984	AD	16+	SOP-8
REF198FS-REEL	5545	AD	06+	SOP-8
REF3030AIDBZR	4334	TI	15+	SOT-23
REF3040AIDBZR	4160	TI	15+	SOT-23
REF5020AIDR	3759	TI	16+	SOP-8
REF5025AIDGKR	7693	TI	15+	MSOP-8
REF5025AIDR	5866	TI	16+	SOP-8
REG113NA-3/3K	6375	TI	15+	SOT23-5
RFANT5220110A2T	48000	WALSIN	16+	SMD
RGP02-20E-E3/54	82000	VISHAY	16+	DO-41
RHRP3060	17467	FSC	14+	TO-220
RJH60F7DPQ	7148	RENESAS	13+	TO-247
RN1907FE	161000	TOSHIBA	15+	SOT-563

Product Tags: multi emitter transistor silicon power transistors

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