Surface mount Si-Epitaxial PlanarTransistors BCP53

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	BCP53
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	negotiation
Payment Terms	T/T, Western Union, PayPal
Supply Ability	1000pcs
Delivery Time	1 day
Packaging Details	please contact me for details
Description	Bipolar (BJT) Transistor PNP 80 V 1.2 A 1.5 W Surface Mount SOT-223-4
Power dissipation – Verlustleistung	1.3 W
Collector current – Kollektorstrom (DC)	1 A
Peak Collector current – Koll.-Spitzenstrom	1.5 A
Peak Base current – Basis-Spitzenstrom	200 mA
Junction temperature – Sperrschichttemperatur	150℃
Storage temperature – Lagerungstemperatur	- 65…+ 150℃

Detailed Product Description

Power dissipation – Verlustleistung 1.3 W

Plastic case SOT-223

Kunststoffgehäuse

Weight approx. – Gewicht ca. 0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T_A = 25℃) Grenzwerte (T_A = 25℃)

		BCP 51	BCP 52	BCP 53
Collector-Emitter-voltage B open	- V_CE0	45 V	60 V	80 V
Collector-Base-voltage E open	- V_CB0	45 V	60 V	100 V
Emitter-Base-voltage C open	- V_EB0	5 V
Power dissipation – Verlustleistung	P_tot	1.3 W ¹ )
Collector current – Kollektorstrom (DC)	- I_C	1 A
Peak Collector current – Koll.-Spitzenstrom	- I_CM	1.5 A
Peak Base current – Basis-Spitzenstrom	- I_BM	200 mA
Junction temperature – Sperrschichttemperatur	T_j	150℃
Storage temperature – Lagerungstemperatur	T_S	- 65…+ 150℃

¹ ) Mounted on P.C. board with 3 mm² copper pad at each terminal

Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß

Product Tags: npn smd transistor multi emitter transistor

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