Silicon PNP Power Transistors ( Power Amplifier Applications ) 2SA1943

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	2SA1943
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	10000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Collector-base voltage	-230 V
Collector-emitter voltage	-230 V
Emitter-base voltage	-5 V
Collector current	-15 A
Base current	-1.5 A
Collector power dissipation	150 W
Junction temperature	150℃
Storage temperature	-55~150 ℃

Detailed Product Description

Silicon PNP Power Transistors 2SA1943

DESCRIPTION

·With TO-3PL package

·Complement to type 2SC5200

APPLICATIONS

·Power amplifier applications

·Recommended for 100W high fidelity

audio frequency amplifier output stage

PINNING

PIN	DESCRIPTION
1	Emitter
2	Collector;connected to mounting base
3	Base

CHARACTERISTICS Tj=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-50mA ;I_B=0	-230			V
V_CEsat	Collector-emitter saturation voltage	I_C=-8A I_B=-0.8A			-3.0	V
V_BE	Base-emitter voltage	I_C=-7A ; V_CE=-5V			-1.5	V
I_CBO	Collector cut-off current	V_CB=-230V; I_E=0			-5	μA
I_EBO	Emitter cut-off current	V_EB=-5V; I_C=0			-5	μA
h_FE-1	DC current gain	I_C=-1A ; V_CE=-5V	55		160
h_FE-2	DC current gain	I_C=-7A ; V_CE=-5V	35
f_T	Transition frequency	I_C=-1A ; V_CE=-5V		30		MHz
C_OB	Collector output capacitance	f=1MHz;V_CB=-10V		360		pF

hFE-1 classifications

R	O
55-110	80-160

PACKAGE OUTLINE

Product Tags: npn smd transistor silicon power transistors

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