New & Original Silicon NPN DarliCM GROUPon Power Transistors 2SD2390

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	2SD2390
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8500pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor NPN - DarliCM GROUPon 150 V 10 A 55MHz 100 W Through Hole TO-3P
Collector-base voltage	160V
Collector-emitter voltage	150V
Emitter-base voltage	5V
Collector current	10A
Base current	1A
Collector power dissipation	100W
Junction temperature	150 ℃
Storage temperature	-55~150 ℃

Detailed Product Description

Silicon NPN DarliCM GROUPon Power Transistors 2SD2390

DESCRIPTION

·With TO-3PN package

·Complement to type 2SB1560

·High DC current gain

APPLICATIONS

·Audio ,regulator and general purpose

PINNING

PIN	DESCRIPTION
1	Base
2	Collector;connected to mounting base
3	Emitter

CHARACTERISTICS Tj=25℃ unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=30mA ;I_B=0	150			V
V_CEsat	Collector-emitter saturation voltage	I_C=7A ;I_B=7mA			2.5	V
V_BEsat	Base-emitter saturation voltage	I_C=7A ;I_B=7mA			3.0	V
I_CBO	Collector cut-off current	V_CB=160V I_E=0			100	μA
I_EBO	Emitter cut-off current	V_EB=5V; I_C=0			100	μA
h_FE	DC current gain	I_C=7A ; V_CE=4V	5000
C_ob	Output capacitance	I_E=0 ; V_CB=10V;f=1MHz		95		pF
f_T	Transition frequency	I_C=2A ; V_CE=12V		55		MHz
Switching times
t_on	Turn-on time	I_C=7A;R_L=10Ω I_B1=- I_B2=7mA V_CC=70V		0.5		μs
t_s	Storage time			10.0		μs
t_f	Fall time			1.1		μs

 h_FE Classifications

O	P	Y
5000-12000	6500-20000	15000-30000

PACKAGE OUTLINE

Product Tags: npn smd transistor silicon power transistors

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