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2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

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City: shenzhen

Country/Region:china

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Ms.Doris Guo
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2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

Brand Name T O S
Model Number 2SC5242
Certification Original Factory Pack
Place of Origin Japan
Minimum Order Quantity 50
Payment Terms T/T, Western Union,Paypal
Supply Ability 4000
Delivery Time 1
Packaging Details please contact me for details
Price Negotiate
Description Bipolar (BJT) Transistor NPN 250 V 17 A 30MHz 130 W Through Hole TO-3P
hFE Classification R 55-110
hFE Classification O 80-160
Main Line IC components, Transistor, Diode, Module,Capacitor etc
Voltage 230V
Temperature -50-+150°C
Package TO-3P
Detailed Product Description

2SC5242 3 Pin Transistor NPN Epitaxial Silicon Transistor Original

 

 

 

NPN Epitaxial Silicon Transistor 2SC5242 

 

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier Features

• High Current Capability: IC = 15A

• High Power Dissipation : 130watts

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1962/FJA4213.

• Thermal and electrical Spice models are available

• Same transistor is also available in: --TO264 package,

2SC5200/FJL4315 : 150 watts --TO220 package,

FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts

 

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

 

SymbolParameterRatingsUnits
BVCBOCollector-Base Voltage230V
BVCEOCollector-Emitter Voltage230V
BVEBOEmitter-Base Voltage5V
ICCollector Current(DC)15A
IBBasic Current1.5A
PDTotal Device Dissipation(TC=25°C) Derate above 25°C

130

1.04

W

W/°C

TJ, TSTGJunction and Storage Temperature-50-+150°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

 

Thermal Characteristics* Ta=25°C unless otherwise noted

SymbolParameterMAX.Unit
RθJCThermal Resistance, Junction to Case0.96W/°C

* Device mounted on minimum pad size

 

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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