STF13NK50Z, STP13NK50Z, STW13NK50Z
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247
Zener-protected SuperMESHTM Power MOSFET
Features
| Type | VDSS | RDS(on) max | ID | Pw |
| STF13NK50Z | 500 V | <0.48 Ω | 11 A | 30 W |
| STP13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
| STW13NK50Z | 500 V | <0.48 Ω | 11 A | 140 W |
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an extreme optimization
of ST’s well established strip-based PowerMESH™ layout. In addition
to pushing on-resistance significantly down, special care is taken
to ensure a very good dv/dt capability for the most demanding
applications. Such series complements ST full range of high voltage
MOSFETs.
Absolute maximum ratings
| Symbol | Parameter | Value | Unit |
| TO-220, TO-247 | TO-220FP |
| VDS | Drain-source voltage (VGS = 0) | 500 | V |
| VGS | Gate-source voltage | ± 30 | V |
| ID | Drain current (continuous) at TC = 25 °C | 11 | 11(1) | A |
| ID | Drain current (continuous) at TC=100 °C | 6.93 | 6.93(1) | A |
| IDM(2) | Drain current (pulsed) | 44 | 44(1) | A |
| PTOT | Total dissipation at TC = 25 °C | 140 | 30 | W |
| | Derating factor | 1.12 | 0.24 | W/°C |
| dv/dt(3) | Peak diode recovery voltage slope | 4.5 | V/ns |
| VISO | Insulation withstand voltage (RMS) from all three leads to external
heat sin (t=1 s;TC= 25 °C) | | 2500 | V |
TJ Tstg | Operating junction temperature Storage temperature | -55 to 150 | °C |
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS
Internal schematic diagram
Stock Offer (Hot Sell)
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