IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V
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Features ► Integrated half-bridge package ► Reduces the part count by half ► Facilitates better PCB layout ► Key parameters optimized for Class-D audio amplifier applications ► Low RDS(ON) for improved efficiency ► Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI ► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier ► Lead-free package
Description This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
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Product Tags: npn smd transistor multi emitter transistor |
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