TIP122 Power Mosfet Transistor Complementary Silicon Power DarliCM GROUPon Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

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Ms.Doris Guo View Contact Details

TIP122 Power Mosfet Transistor Complementary Silicon Power DarliCM GROUPon Transistors

Model Number	TIP122
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	6800pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor NPN - DarliCM GROUPon 100 V 5 A 2 W Through Hole TO-220
Emitter-Base Voltage	5 V
Collector Current	5 A
Collector Peak Current	8 A
Base Current	0.1 A
Storage Temperature	-65 to 150 ℃
Max. Operating Junction Temperature	150 ℃

Detailed Product Description

TIP120/121/122

TIP125/126/127

COMPLEMENTARY SILICON POWER DARLICM GROUPON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES

DESCRIPTION

The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic DarliCM GROUPon configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively.

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value			Unit
		NPN	TIP120	TIP121	TIP122
		PNP	TIP125	TIP126	TIP127
V_CBO	Collector-Base Voltage (I_E = 0)		60	80	100	V
V_CEO	Collector-Emitter Voltage (I_B = 0)		60	80	100	V
V_EBO	INTERNAL SCHEMATIC DIAGRAM (I_C = 0)		5			V
I_C	Collector Current		5			A
I_CM	Collector Peak Current		8			A
I_B	Base Current		0.1			A
P_tot	Total Dissipation at Tcase ≤ 25 ℃ Tamb ≤ 25 ℃		65 2			W
T_stg	Storage Temperature		-65 to 150			℃
T_j	Max. Operating Junction Temperature		150			℃

TO-220 INTERNAL SCHEMATIC DIAGRAM

Product Tags: npn smd transistor multi emitter transistor

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