New & Original Silicon PNP Power Transistors, TO-220C package 2SB861

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	2SB861
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	Bipolar (BJT) Transistor
Collector-base voltage	-200 V
Collector-emitter voltage	-150 V
Emitter-base voltage	-6 V
Collector current	-2 A
Collector current-Peak	-5 A
Junction temperature	150 ℃
Storage temperature	-45~150 ℃
package	TO-220C package

Detailed Product Description

Silicon PNP Power Transistors 2SB861

DESCRIPTION

·With TO-220C package

·Complement to type 2SD1138

APPLICATIONS

·Low frequency power amplifier color TV vertical deflection output

PINNING

PIN	DESCRIPTION
1	Emitter
2	Collector;connected to mounting base
3	Base

Absolute maximum ratings(Ta=25℃)

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	Open emitter	-200	V
V_CEO	Collector-emitter voltage	Open base	-150	V
V_EBO	Emitter-base voltage	Open collector	-6	V
I_C	Collector current		-2	A
I_CP	Collector current-Peak		-5	A
P_C	Collector power dissipation	T_a=25℃	1.8	W
P_C	Collector power dissipation	T_C=25℃	30	W
T_j	Junction temperature		150	℃
T_stg	Storage temperature		-45~150	℃

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

Product Tags: npn smd transistor multi emitter transistor

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