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BTA24-600CWRG 3 Pin Transistor 25 A standard and Snubberless triacs

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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BTA24-600CWRG 3 Pin Transistor 25 A standard and Snubberless triacs

Model Number BTA24-600CWRG
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8700pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description TRIAC Alternistor - Snubberless 600 V 25 A Through Hole TO-220
Critical rate of rise of on-state current 50 A/µs
Non repetitive surge peak off-state voltage VDRM/VRRM + 100 V
Peak gate current 4 A
Average gate power dissipation 1 W
Storage junction temperature - 40 to + 150° C
Operating junction temperature - 40 to + 125 ° C
Detailed Product Description

 

BTA24, BTB24, BTA25 BTA26, BTB26, T25

 

25 A standard and Snubberless™ triacs

 

Features

■ High current triac

■ Low thermal resistance with clip bonding

■ High commutation (4 quadrant) or very high commutation (3 quadrant) capability

■ BTA series UL1557 certified (File ref: 81734)

■ Packages are RoHS (2002/95/EC) compliant

 

Applications

Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar.

 

The snubberless versions (BTA/BTB...W and T25 series) are especially recommended for use on inductive loads, due to their high commutation performances. The BTA series provides an insulated tab (rated at 2500 VRMS).

 

Absolute maximum ratings

SymbolParameterValueUnit
IT(RMS)RMS on-state current (full sine wave)TOP3Tc = 105° C25A
D2PAK / TO-220ABTc = 100° C
RD91 Ins/ TOP3 Ins.Tc = 100° C
TO-220AB Ins.Tc = 75° C
ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25° C)

F = 50 Hzt = 20 ms250A
F = 60 Hzt = 16.7 ms260
I² tI² t Value for fusingtp = 10 ms340A² s
dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 HzTj = 125° C50A/µs
VDSM/VRSMNon repetitive surge peak off-state voltagetp = 10 msTj = 25° CVDRM/VRRM + 100V
IGMPeak gate currenttp = 20 µsTj = 125° C4A
PG(AV)Average gate power dissipationTj = 125° C1W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

° C

 

 

 

 

 

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Product Tags: npn smd transistor   multi emitter transistor  
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