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2SC4546 3 Pin Transistor isc Silicon NPN Power Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

2SC4546 3 Pin Transistor isc Silicon NPN Power Transistor
Model Number 2SC4546
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 9100pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN 400 V 7 A 10MHz 30 W Through Hole TO-220F
Collector-Base Voltage 600 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Junction Temperature 150 ℃
Storage Temperature -55~150 ℃
Detailed Product Description

 

Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
RURG80606054FSC13+TO-247
S11334195HAMAMATSU13+DIP-2
S14K32092000EPSON15+DIP
S1D13506F00A2002146EPSON11+QFP
S1G-E3/61T18000VISHAY16+DO-214
S21152BB1768INTEL10+QFP
S25FL128P0XMFI00112260SPANSION16+SOP-16
S25FL216KOPMFI01168000SPANSION14+SOP-8
S25FL512SAGMFI0133723SPANSION15+SOP-16
S29AL016D70TFI0105204SPANSION08+TSSOP-48
S29JL064H90TFI005068SPANSION06+TSSOP-48
S2B-PH-K-S167000JST14+SMD
S2J-E3/52T75000VISHAY15+DO-214AA
S2S4BYOF13830SHARP16+SOP-4
S34ML08G101BHI0002100SPANSION16+BGA63
S3A-E3/57T8500VISHAY16+DO-214AB
S3B-13-F67000DIODES16+DO-214AB
S3C6410X66-YB402983SAMSUNG14+BGA
S3F9454BZZ-DK945833SAMSUNG09+DIP
S4X8ES69000LITTELFUS10+TO-92
S558-5500-25-F5804BELFUSE15+SOP-16
S5B-PH-K-S(LF)(SN)94000JST16+NA
S5M-E3/57T77000VISHAY16+DO-214AB
S6040R8070LITTELFUS14+TO-220
S6B-XH-SM4-TB(LF)(SN)7573JST16+SMD
S7B-PH-SM4-TB(LF)(SN)23131JST13+SMD
S8025L8041TECCOR07+TO-220
S8065K5681TECCOR16+TO-3P
SAB80C517A-N18-T32443 14+PLCC84
SAFEA2G35MB0F00R156517MURATA16+SMD

 

 

isc Silicon NPN Power Transistor 2SC4546

 

DESCRIPTION

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)

·High Switching Speed

 

APPLICATIONS

·Designed for switching regulator, lighting inverter and general purpose applications.

 

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOLPARAMETERVALUEUNIT
VCBOCollector-Base Voltage600V
VCEOCollector-Emitter Voltage400V
VEBOEmitter-Base Voltage7V
ICCollector Current-Continuous7A
ICMCollector Current-Peak14A
IBBase Current-Continuous2A
PCCollector Power Dissipation @TC=25℃30W
TJJunction Temperature150℃
TstgStorage Temperature-55~150℃

 

 

 

 

 

 

 
Product Tags: multi emitter transistor   silicon power transistors  
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