IRFP9140N Transistor Components ,electronic devices and integrated circuits

IRFP9140N Transistor Components ,electronic devices and integrated circuits

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l P-Channel l Fast Switching

l Fully Avalanche Rated

Continuous Drain Current, VGS @ -10V -23 ID @ TC = 100°C

Continuous Drain Current, VGS @ -10V -16 A

IDM Pulsed Drain Current … -76 PD @TC = 25°C

Power Dissipation 140 W Linear Derating Factor 0.91 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy‚… 430 mJ

IAR Avalanche Current -11 A

EAR Repetitive Avalanche Energy 14 mJ dv/dt

Peak Diode Recovery dv/dt ƒ… -5.0 V/ns

TJ Operating Junction and -55 to + 175 TSTG

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C