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IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic

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City: shenzhen

Country/Region:china

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IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic

Model Number IRFZ44NPBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8700pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 55 V 49A (Tc) 94W (Tc) Through Hole TO-220AB
Continuous Drain Current 49 A
Pulsed Drain Current 160 A
Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 20 V
Repetitive Avalanche Energy 9.4 mJ
Detailed Product Description

 

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IRFZ44NPbF

HEXFET® Power MOSFET

 

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free

VDSS = 55V

RDS(on) = 17.5mΩ

ID = 49A

 

 

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

Absolute Maximum Ratings

 ParameterMax.Units
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V49A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V35A
IDMPulsed Drain Current160A
PD @TC = 25°CPower Dissipation94W
 Linear Derating Factor0.36W/°C
VGSGate-to-Source Voltage± 20V
IARAvalanche Current25A
EARRepetitive Avalanche Energy9.4mJ
dv/dtPeak Diode Recovery dv/dt5.0V/ns

TJ

TSTG

Operating Junction and 

Storage Temperature Range

-55 to + 175°C
 Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
 Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m) 

 

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

 

 

TO-220AB Part Marking Information

 

 

 

 

 

Product Tags: npn smd transistor   multi emitter transistor  
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