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BTA08-600CWRG Power Mosfet Transistor Triacs Sensitive Gate 8A TRIACS

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BTA08-600CWRG Power Mosfet Transistor Triacs Sensitive Gate 8A TRIACS

Model Number BTA08-600C
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description TRIAC Alternistor - Snubberless 600 V 8 A Through Hole TO-220
RMS on-state current (full sine wave) 8 A
I² t Value for fusing 36 A² s
Peak gate current 4 A
Average gate power dissipation 1 W
Storage junction temperature range - 40 to + 150°C
Operating junction temperature range - 40 to + 125 °C
Detailed Product Description

 

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BTA/BTB08 and T8 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD 8A TRIACS

 

MAIN FEATURES:

SymbolValueUnit
IT(RMS)8A
VDRM/VRRM600 and 800V
IGT (Q1)5 to 50mA

 

DESCRIPTION

Available either in through-hole or surface-mount packages, the BTA/BTB08 and T8 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...

 

The snubberless versions (BTA/BTB...W and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)

 

ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
IT(RMS)RMS on-state current (full sine wave)

DPAK / D² PAK

IPAK / TO-220AB

Tc = 110°C8A
TO-220AB Ins.Tc = 100°C
ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25°C)F = 50 Hzt = 20 ms80A
F = 60 Hzt = 16.7 ms84
I ² tI² t Value for fusingtp = 10 ms36A² s
dI/dtCritical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 nsF = 120 HzTj = 125°C50A/µs
IGMPeak gate currenttp = 20 µsTj = 125°C4A
PG(AV)Average gate power dissipationTj = 125°C1W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

 

- 40 to + 150

- 40 to + 125

°C

 

 

 

 

 

 

Product Tags: npn smd transistor   silicon power transistors  
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