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New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600B

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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New & Original 50 mA Mosfet Power Module 40A TRIACS BTA40-600B

Model Number BTA40-600
Certification new & original
Place of Origin original factory
Minimum Order Quantity 5pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 850pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description TRIAC Standard 600 V 40 A Chassis Mount RD91
IT(RMS) 40 A
VDRM/VRRM 600 and 800 V
IGT (Q1) 50 mA
IGM 8 A
PG(AV) 1 W
I t 880 A s
Detailed Product Description

 
40A TRIACS
 
MAIN FEATURES:

   Symbol            Value       Unit
  IT(RMS)            40        A
  VDRM/VRRM           600 and 800        V
  IGT (Q1)            50       mA

 
DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC power switching. They can be used as an ON/ OFF function in applications such as static relays, heating regulation, water heaters, induction motor starting circuits, welding equipment... or for phase control operation in high power motor speed controllers, soft start circuits...
 
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
 
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734).
 
 
 

ABSOLUTE MAXIMUM RATINGS

  Symbol                                             Parameter       Value   Unit

   IT(RMS)
 

  RMS on-state current
  (full sine wave)
 

      RD91  Tc = 80°C      40     A
      TOP3
      TOP3 Ins.  Tc = 70°C
  ITSM

  Non repetitive surge peak on-state
 current (full cycle, Tj initial = 25°C)

  F = 60 Hz  t = 16.7 ms     420     A
  F = 50 Hz   t = 20 ms     400
   It  I t Value for fusing                     tp = 10 ms      880     A s
  dI/dt

  Critical rate of rise of on-state  current
  IG =2xIGT , tr ≤ 100 ns

  F = 120 Hz  Tj = 125°C      50    A/µs
VDSM/VRSM  Non repetitive surge peak off-state  voltage  tp = 10 ms  Tj = 25°C

 VDRM/VRRM
    + 100

     V
  IGM  Peak gate current  tp = 20 µs   Tj = 125°C       8     V
  PG(AV)  Average gate power dissipation  Tj = 125°C       1     W

  Tstg
   Tj

  Storage junction temperature range
  Operating junction temperature range

 - 40 to + 150
 - 40 to + 125

     °C

 
 
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

 Symbol      Test Conditions  Quadrant     Value   Unit
  IGT (1)  VD = 12 V         RL = 33 Ω

   I - II - III
      IV

   MAX.

     50
    100

  mA
 

  VGT   ALL   MAX.     1.3   V
  VGD VD = VDRM    RL = 3.3 kΩ    Tj = 125°C   ALL    MIN.     0.2   V
  IH (2) IT = 500 mA    MAX.     80   mA
  IL IG = 1.2 IGT

  I - III - IV
      II

    MAX.
 

     70
    160

   mA
 dV/dt (2)  VD = 67 % VDRM gate open  Tj = 125°C    MIN.     500  V/µs
(dV/dt)c (2)  (dI/dt)c = 20 A/ms                  Tj = 125°C    MIN.      10  V/µs

 

Product Tags: low voltage power mosfet   hybrid inverter circuit  
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