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CHONGMING GROUP (HK) INT'L CO., LTD.
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ILD205T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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ILD205T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package

Model Number ILD205T
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8200pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Optoisolator Transistor Output 4000Vrms 2 Channel 8-SOIC
MAX Operating Temperature + 100 C
Min Operating Temperature - 55 C
packing reel
factory packing quantity 2000
Detailed Product Description

 

ILD205T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package

 

 

Features

 

Two Channel Coupler

SOIC-8A Surface Mountable Package

Standard Lead Spacing of .05 "

Available only on Tape and Reel Option (Conforms to EIA Standard 481-2)

Isolation Test Voltage, 3000 VRMS

Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

Lead-free component

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

 

 

 

Agency Approvals

 

• UL1577, File No. E52744 System Code Y

 

 

Description

 

The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

 

 

 

 

 

 

A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V

 

 

 

 

Order Information

 

 

PartRemarks
ILD205TCTR 40 - 80 %, SOIC-8
ILD206TCTR 63 - 125 %, SOIC-8
ILD207TCTR 100 - 200 %, SOIC-8
ILD211TCTR > 20 %, SOIC-8
ILD213TCTR > 100 %, SOIC-8
ILD217TCTR > 100 %, SOIC-8

 

 

 

Absolute Maximum Ratings

 

Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

 

 

 

Input

 

ParameterTest conditionSymbolValueUnit
Peak reverse voltage VR   6.0  V 
Peak pulsed current1.0 µs, 300 pps    1.0  A
Continuous forward current per channel      30 mA
Power dissipation Pdiss    50 mW
Derate linearly from 25 °C      0.66mW/°C

 

 

Output

 

ParameterTest conditionSymbolValueUnit
Collector-emitter breakdown voltage BVCEO 70  V
Emitter-collector breakdown voltage BVECO 7.0  V
Power dissipation per channel Pdiss 125  mW
Derate linearly from 25 °C   1.67  mW/°C

 

 

Coupler

 

ParameterTest conditionSymbolValueUnit
Total package dissipation ambient (2 LEDs + 2 detectors, 2 channels) Ptot 300 mW
Derate linearly from 25 °C    4.0mW/°C
Storage temperature Tstg- 55 to + 150°C
Operating temperature Tamb- 55 to + 100°C
Soldering time from 260 °C Tsld 10sec.

 

 

Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

 

 


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