BTS721L1 Electronic IC Chips Smart Four Channel Highside Power Switch

Smart Four Channel Highside Power Switch

Features

• Overload protection

• Current limitation

• Short-circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection¹)

• Undervoltage and overvoltage shutdown with auto-restart and hysteresis

• Open drain diagnostic output

• Open load detection in ON-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

1) With external current limit (e.g. resistor R_GND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitive loads

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Maximum Ratings at T_j = 25°C unless otherwise specified

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3) RI = internal resistance of the load dump test pulse generator

4) V_{Load dump} is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15

6) Soldering point: upper side of solder edge of device pin 15. See page 15

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