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MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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MSA-1105-TR1 Electronic IC Chips Cascadable Silicon Bipolar MMIC Amplifier

Model Number MSA-1105-TR1
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 9000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description RF Amplifier IC ISM, PCS, WLL, 802.16/WiMax 50MHz ~ 1.3GHz 05 Plastic Package
Device Current 80 mA
Power Dissipation 550 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C
Device Voltage Temperature Coefficient -8.0 mV/°C
Detailed Product Description

 

Cascadable Silicon Bipolar MMIC Amplifier MSA-1105

 

Features

• High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block

• 3 dB Bandwidth: 50 MHz to 1.3 GHz

• 17.5 dBm Typical P1 dB at 0.5 GHz

• 3.6 dB Typical Noise Figure at 0.5 GHz

• Surface Mount Plastic Package

• Tape-and-Reel Packaging Option Available[1]


Note: 1. Refer to PACKAGING section “Tapeand-Reel Packaging for Semiconductor Devices.”

 

Description

The MSA-1105 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems.

 

The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

 

Typical Biasing Configuration

 

 

 

05 Plastic Package

 

 

MSA-1105 Absolute Maximum Ratings

ParameterAbsolute Maximum[1]
Device Current80 mA
Power Dissipation[2,3]550 mW
RF Input Power+13 dBm
Junction Temperature150°C
Storage Temperature–65 to 150°C

 

Thermal Resistance[2,4]: θjc = 125°C/W


Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 8 mW/°C for TC > 124°C.

4. See MEASUREMENTS section “Thermal Resistance” for more information.

 

05 Plastic Package Dimensions

 

 

 

 

 

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Product Tags: electronic integrated circuit   linear integrated circuits  
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