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GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

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GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

Model Number TLP504A-2
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 4800pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Pulse forward current 1 (100μs pulse, 100pps) A
Reverse voltage 5 V
Junction temperature 125 °C
Collector−emitter voltage 55 V
Emitter−collector voltage 7 V
Collector current 50 mA
Storage temperature range −55~150 °C
Operating temperature range −55~100 °C
Detailed Product Description

 

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP504A,TLP504A−2

 

Programmable Controllers AC / DC−Input Module Solid State Relay

 

The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.

 

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.) Rank GB: 100% (min.)

• Isolation voltage: 2500 Vrms (min.)

• UL recognized: UL1577,

                           File no. E67349

 

 

 

Pin Configurations (top view)

 

 

Absolute Maximum Ratings (Ta = 25°C)

         Characteristic  Symbol                       Rating  Unit
   TLP504A   TLP504A−2
 LED Forward current   IF      60       50  mA
 Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C
 Pulse forward current  IFP           1 (100μs pulse, 100pps)  A
 Reverse voltage  VR                            5  V
 Junction temperature  Tj                          125 °C
Detector Collector−emitter voltage VCEO                           55  V
 Emitter−collector voltage VECO                            7  V
 Collector current   IC                           50 mA
 Collector power dissipation (1 circuit)  PC      150      100 mW

 Collector power dissipation derating

 (1 circuit Ta ≥ 25°C)

 ΔPC / °C     -1.5      -1.0mW /°C
 Junction temperature  Tj                        125  °C
  Storage temperature range  Tstg                     −55~150  °C
  Operating temperature range  Topr                     −55~100  °C
  Lead soldering temperature  Tsol                    260 (10 s)  °C
  Total package power dissipation  RT      250       150  mW

  Total package power dissipation derating

  (Ta ≥ 25°C)

 ΔPT / °C     -2.5       -1.5mW / °C
  Isolation voltage  BVS

 2500 (AC, 1min., R.H.≤ 60%)

 (Note 1)

 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

 

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