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New & Original 512K I2C™ CMOS Serial EEPROM 24LC512-I/P

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

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Ms.Doris Guo
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New & Original 512K I2C™ CMOS Serial EEPROM 24LC512-I/P

Model Number 24LC512-I/P
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 4600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description EEPROM Memory IC 512Kbit I²C 400 kHz 900 ns 8-PDIP
VCC 6.5V
All inputs and outputs w.r.t. VSS -0.6V to VCC +1.0V
Storage temperature -65°C to +150°C
Ambient temperature with power applied -40°C to +125°C
ESD protection on all pins ≥ 4 kV
Packages Include 8-lead PDIP, SOIJ and DFN
Detailed Product Description

 

512K I2C™ CMOS Serial EEPROM

 

Device Selection Table

   Part Number   VCC Range  Max. Clock Frequency  Temp. Ranges
   24AA512    1.7-5.5V   400 kHz(1)      I
   24LC512    2.5-5.5V   400 kHz     I, E
   24FC512    1.7-5.5V   1 MHz(2)      I

Note 1: 100 kHz for VCC < 2.5V

        2: 400 kHz for VCC < 2.5V

 

Features:

• Single Supply with Operation Down to 1.7V for

  24AA512 and 24FC512 Devices, 2.5V for 24LC512 Devices

• Low-Power CMOS Technology:

  - Active current 400 uA, typical

  - Standby current 100 nA, typical

• 2-Wire Serial Interface, I2C™ Compatible

• Cascadable for up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Clock Compatibility

• Page Write Time 5 ms max.

• Self-Timed Erase/Write Cycle

• 128-Byte Page Write Buffer

• Hardware Write-Protect

• ESD Protection >4000V

• More than 1 Million Erase/Write Cycles

• Data Retention > 200 years

• Packages Include 8-lead PDIP, SOIJ and DFN

• Pb-Free and RoHS Compliant

• Temperature Ranges:

  - Industrial (I): -40°C to +85°C

  - Automotive (E):-40°C to +125°C

 

Description:

The Microchip Technology Inc. 24AA512/24LC512/ 24FC512 (24XX512*) is a 64K x 8 (512 Kbit) Serial Electrically Erasable PROM, capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications and data acquisition. This device also has a page write capability of up to 128 bytes of data. This device is capable of both random and sequential reads up to the 512K boundary. Functional address lines allow up to eight devices on the same bus, for up to 4 Mbit address space. This device is available in the standard 8-pin plastic DIP, SOIJ and DFN packages.

 

Block Diagram

 

 

Package Type

 

 

Absolute Maximum Ratings (†) VCC...................................................................................................................................................6.5V

All inputs and outputs w.r.t. VSS .............................................................................. -0.6V to VCC +1.0V

Storage temperature .....................................................................................................-65°C to +150°C

Ambient temperature with power applied........................................................................-40°C to +125°C

ESD protection on all pins ..............................................................................................................≥ 4 kV

 

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

 

 

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