CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	Ti
Model Number	CSD17575Q3
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	VSONP-8
Description	N-Channel 30 V 60A (Ta) 2.8W (Ta), 108W (Tc) Surface Mount 8-VSON-CLIP (3.3x3.3)
Unit Weight	0.001570 oz
Typical Turn-On Delay Time	4 ns
Typical Turn-Off Delay Time	20 ns
Subcategory	MOSFETs
Rise Time	10 ns
Fall Time	3 ns

Detailed Product Description

CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET

1 Features

2 Applications

Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications

3 Description

This 1.9 mΩ, 30 V, SON 3×3 NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5V)	23		nC
Qgd	Gate Charge Gate-to-Drain	5.4		nC
RDS(on)	Drain-to-Source On- Resistance	VGS = 4.5 V	2.6	mΩ
		VGS =10V	1.9
Vth	Threshold Voltage	1.4		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package Limit)	60	A
	Continuous Drain Current (Silicon Limit), TC = 25°C	182
	Continuous Drain Current(1)	27
IDM	Pulsed Drain Current(2)	240	A
PD	Power Dissipation(1)	2.8	W
PD	Power Dissipation, TC = 25°C	108	W
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =48,L=0.1mH,RG =25Ω	115	mJ

Product Tags: mosfet motor control circuit n channel mos field effect transistor

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