CSD18533Q5A Mosfet Power Transistor MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

Qg

Gate Charge Total (10 V)

29

nC

Qgd

Gate Charge Gate-to-Drain

5.4

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

6.5

mΩ

VGS =10V

4.7

mΩ

VGS(th)

Threshold Voltage

1.9

V

Device

Qty

Media

Package

Ship

CSD18533Q5A

2500

13-Inch Reel

SON 5 mm × 6 mm Plastic Package

Tape and Reel

CSD18533Q5AT

250

7-Inch Reel

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited), TC = 25°C

100

A

Continuous Drain Current (Silicon limited), TC = 25°C

103

Continuous Drain Current, TA = 25°C(1)

17

IDM

Pulsed Drain Current, TA = 25°C(2)

267

A

PD

Power Dissipation(1)

3.2

W

Power Dissipation, TC = 25°C

116

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =53A,L=0.1mH,RG =25Ω

140

mJ