CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo View Contact Details

CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

Brand Name	Ti
Model Number	CSD17556Q5B
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	VSON-8
Description	MOSFET N-CH 30V 34A/100A 8VSON
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3.1 W
Configuration	Single
Height	1 mm
LeCM GROUPh	6 mm

Detailed Product Description

CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs

1 Features

Extremely Low Resistance
Ultra-Low Qg and Qgd
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

2 Applications

Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
Synchronous Rectification
Active ORing and Hotswap Applications

3 Description

This 30-V, 1.2-mΩ, 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	30		nC
Qgd	Gate Charge Gate-to-Drain	7.5		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	1.5	mΩ
		VGS =10V	1.2
VGS(th)	Threshold Voltage	1.4		V

Device Information

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD17556Q5B	2500	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel
CSD17556Q5BT	250	13-Inch Reel	SON 5.00-mm × 6.00-mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package Limited)	100	A
	Continuous Drain Current (Silicon Limited), TC = 25°C	215
	Continuous Drain Current(1)	34
IDM	Pulsed Drain Current, TA = 25°C(1)(2)	400	A
PD	Power Dissipation(1)	3.1	W
PD	Power Dissipation, TC = 25°C	191	W
TJ, Tstg	Operating Junction, Storage Temperature	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse ID =100A,L=0.1mH,RG =25Ω	500	mJ

Product Tags: mosfet motor control circuit n channel mos field effect transistor

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