CSD16556Q5B Mosfet Power Transistor MOSFET 25V NexFET N Ch Pwr MosFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

CSD16556Q5B Mosfet Power Transistor MOSFET 25V NexFET N Ch Pwr MosFET

Brand Name	Ti
Model Number	CSD16556Q5B
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	SON8
Description	MOSFET N-CH 25V 100A 8VSON
Rds On - Drain-Source Resistance	1.2 mOhms
Rise Time	34 ns
Fall Time	13 ns
Product Type	MOSFET
Typical Turn-On Delay Time	17 ns
Typical Turn-Off Delay Time	25 ns

Detailed Product Description

CSD16556Q5B Mosfet Power Transistor MOSFET 25V NexFET N Ch Pwr MosFET

1 Features

Extremely Low Resistance
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

2 Applications

Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications

3 Description
This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFETTM power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Absolute Maximum Ratings

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	25		V
Qg	Gate Charge Total (4.5 V)	36		nC
Qgd	Gate Charge Gate-to-Drain	12		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	1.2	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	0.9	mΩ
VGS(th)	Threshold Voltage	1.4		V

Device	Media	Qty	Package	Ship
CSD16556Q5B	13-Inch Reel	2500	SON 5 x 6 mm Plastic Package	Tape and Reel
			SON 5 x 6 mm Plastic Package	Tape and Reel

Product Tags: mosfet motor control circuit n channel mos field effect transistor

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