CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	Ti
Model Number	CSD17578Q3A
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	DFN33
Description	MOSFET N-CH 30V 20A 8VSON
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Mounting Style	Mounting Style
Technology	Si

Detailed Product Description

CSD17578Q3A Mosfet Power Transistor MOSFET CSD17578Q3A 30 V 8-VSONP

1 Features

2 Applications

Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Control FET Applications

3 Description

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	7.9		nC
Qgd	Gate Charge Gate to Drain	1.7		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	8.2	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	6.3	mΩ
VGS(th)	Threshold Voltage	1.5		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package limited)	20	A
	Continuous Drain Current (Silicon limited), TC = 25°C	54
	Continuous Drain Current(1)	14
IDM	Pulsed Drain Current(2)	142	A
PD	Power Dissipation(1)	2.5	W
PD	Power Dissipation, TC = 25°C	37	W
TJ, Tstg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =22A,L=0.1mH,RG =25Ω	24	mJ

Product Tags: p channel mosfet driver circuit mosfet motor control circuit

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