BSC046N10NS3G Mosfet Power Transistor MOSFET N Ch 100V 100A TDSON-8

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

BSC046N10NS3G Mosfet Power Transistor MOSFET N Ch 100V 100A TDSON-8

Brand Name	Ti
Model Number	BSC046N10NS3G
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	QFN8
Description	MOSFET N-CH 100V 17A/100A TDSON
Configuration	Single
Pd - Power Dissipation	156 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Qg - Gate Charge	63 nC

Detailed Product Description

BSC046N10NS3G Mosfet Power Transistor MOSFET N-Ch 100V 100A TDSON-8

Features

• Very low gate charge for high frequency applications

• Optimized for dc-dc conversion

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21

Product Tags: p channel mosfet driver circuit mosfet motor control circuit

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