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IXGT32N60BD1 IGBT Power Module Transistors IGBTs Single

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IXGT32N60BD1 IGBT Power Module Transistors IGBTs Single

China IXGT32N60BD1 IGBT Power Module Transistors IGBTs Single supplier

IXGT32N60BD1 IGBT Power Module Transistors IGBTs Single

Part Number	IXGT32N60BD1
Manufacturer	IXYS
Description	IGBT 600V 60A 200W TO268
Category	Transistors - IGBTs - Single
Family	Transistors - IGBTs - Single
Series	HiPerFAST™
Place of Origin	Original
Minimum Order Quantity	Negotiable
Price	Negotiable
Delivery Time	Negotiable
Payment Terms	T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	100000

Detailed Product Description

IXGT32N60BD1 Specifications

Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 32A
Power - Max	200W
Switching Energy	600µJ (off)
Input Type	Standard
Gate Charge	110nC
Td (on/off) @ 25°C	25ns/100ns
Test Condition	480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr)	25ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

IXGT32N60BD1 Packaging

Detection

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