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GT60N321(Q) IGBT Power Module Transistors IGBTs Single

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KZ TECHNOLOGY (HONGKONG) LIMITED

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GT60N321(Q) IGBT Power Module Transistors IGBTs Single

China GT60N321(Q) IGBT Power Module Transistors IGBTs Single supplier

GT60N321(Q) IGBT Power Module Transistors IGBTs Single

Part Number	GT60N321(Q)
Manufacturer	Toshiba Semiconductor and Storage
Description	IGBT 1000V 60A 170W TO3P LH
Category	Transistors - IGBTs - Single
Family	Transistors - IGBTs - Single
Place of Origin	Original
Minimum Order Quantity	Negotiable
Price	Negotiable
Delivery Time	Negotiable
Payment Terms	T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	100000

Detailed Product Description

GT60N321(Q) Specifications

Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1000V
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 60A
Power - Max	170W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	330ns/700ns
Test Condition	-
Reverse Recovery Time (trr)	2.5µs
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(LH)
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

GT60N321(Q) Packaging

Detection

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