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APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

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APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

China APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single supplier

APT45GP120B2DQ2G IGBT Power Module Transistors IGBTs Single

Part Number	APT45GP120B2DQ2G
Manufacturer	Microsemi Corporation
Description	IGBT 1200V 113A 625W TMAX
Category	Transistors - IGBTs - Single
Family	Transistors - IGBTs - Single
Series	POWER MOS 7®
Place of Origin	Original
Minimum Order Quantity	Negotiable
Price	Negotiable
Delivery Time	Negotiable
Payment Terms	T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	100000

Detailed Product Description

APT45GP120B2DQ2G Specifications

Part Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	113A
Current - Collector Pulsed (Icm)	170A
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 45A
Power - Max	625W
Switching Energy	900µJ (on), 905µJ (off)
Input Type	Standard
Gate Charge	185nC
Td (on/off) @ 25°C	18ns/100ns
Test Condition	600V, 45A, 5 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

APT45GP120B2DQ2G Packaging

Detection

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