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APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

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APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

China APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single supplier

APT50GN60BDQ2G IGBT Power Module Transistors IGBTs Single

Part Number	APT50GN60BDQ2G
Manufacturer	Microsemi Corporation
Description	IGBT 600V 107A 366W TO247
Category	Transistors - IGBTs - Single
Family	Transistors - IGBTs - Single
Place of Origin	Original
Minimum Order Quantity	Negotiable
Price	Negotiable
Delivery Time	Negotiable
Payment Terms	T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	100000

Detailed Product Description

APT50GN60BDQ2G Specifications

Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	107A
Current - Collector Pulsed (Icm)	150A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 50A
Power - Max	366W
Switching Energy	1185µJ (on), 1565µJ (off)
Input Type	Standard
Gate Charge	325nC
Td (on/off) @ 25°C	20ns/230ns
Test Condition	400V, 50A, 4.3 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

APT50GN60BDQ2G Packaging

Detection

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