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SIHP30N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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KZ TECHNOLOGY (HONGKONG) LIMITED

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SIHP30N60E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single

Part Number SIHP30N60E-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 600V 29A TO220AB
Category Transistors - FETs, MOSFETs - Single
Family Transistors - FETs, MOSFETs - Single
Series E
Place of Origin Original
Minimum Order Quantity Negotiable
Price Negotiable
Delivery Time Negotiable
Payment Terms T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 100000
Detailed Product Description

SIHP30N60E-GE3 Specifications

Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On,Min Rds On)-
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 100V
Vgs (Max)±30V
FET Feature-
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs125 mOhm @ 15A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

SIHP30N60E-GE3 Packaging

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