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IPW65R280E6 Field Effect Transistor Transistors FETs MOSFETs Single

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KZ TECHNOLOGY (HONGKONG) LIMITED

Country/Region:china

Tel:86--15218629016

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Miss.Vicky View Contact Details

Part Number	IPW65R280E6
Manufacturer	Infineon Technologies
Description	MOSFET N-CH 650V 13.8A TO247
Category	Transistors - FETs, MOSFETs - Single
Family	Transistors - FETs, MOSFETs - Single
Series	CoolMOS™
Place of Origin	Original
Minimum Order Quantity	Negotiable
Price	Negotiable
Delivery Time	Negotiable
Payment Terms	T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability	100000

Detailed Product Description

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	13.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Rds On (Max) @ Id, Vgs	280 mOhm @ 4.4A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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