China 1310nm manufacturer
Tianjin Janhoo Optoelectronics Co., Ltd.
SOA(1060nm,1270nm, 1310nm,1550nm,1625nm), Gain Chip(850nm, 1060nm, 1310nm, 1550nm), SLD(1310nm), DFB(1550nm/1310nm), Hybrid Photonic Packaging
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Janhoo 1270nm Gain Chip (RSOA) with Low Ripple and O Band for External Cavity Tunable Light Sources

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Tianjin Janhoo Optoelectronics Co., Ltd.

City: tianjin

Province/State:tianjin

Country/Region:china

Tel:86-176-9546-8303

Contact Person:
Ms.Chen
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Janhoo 1270nm Gain Chip (RSOA) with Low Ripple and O Band for External Cavity Tunable Light Sources

Brand Name JANHOO
Model Number JSA-S27R90P05
Place of Origin CHINA
Minimum Order Quantity 5
Price 514USD
Delivery Time 7DAYS
Detailed Product Description
Janhoo 1310nm Gain Chip
The Janhoo Gain Chip series is designed as a semiconductor optical element that serves as the optical gain medium in external cavity semiconductor lasers. JHBF offers both low reflectivity and high reflectivity types for the vertical facet side reflectivity. Products are available in Chip or COC (Chip on Carrier) formats, and can also be packaged into devices according to customer requirements.
Product Features
  • Proprietary chips with independent controllability
  • O band operation
  • Low ripple products
Applications
  • External cavity tunable light source (TLS)
  • Silicon photonics tunable light source
Technical Specifications
ParameterSymbolWorking ConditionsMinTypMaxUnit
Working currentIop250300mA
Forward VoltageVF1.22V
Centre wavelengthλcIf=250mA,Tc=25℃1270nm
ASE PowerPASEIf=250mA,Tc=25℃5mW
ASE RippleRippleIf=250mA,Tc=25℃0.10.2dB
Emission AngleθR26°
Vertical Divergence Angleθt------30°
Horizontal Divergence Angleθp------16°
AR (Anti-Reflection) ReflectivityRANG0.01%
HR (High-Reflection) ReflectivityRNOR90%
Operating TemperatureTCI=Iop2545°C
Storage TemperatureTstg-40---85°C
Chip Size1000*400*100(±20)μm
Product Tags: 1270nm Gain Chip   Low Ripple RSOA   O Band Semiconductor Optical Element  
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