China 1310nm manufacturer
Tianjin Janhoo Optoelectronics Co., Ltd.
SOA(1060nm,1270nm, 1310nm,1550nm,1625nm)， Gain Chip(850nm, 1060nm, 1310nm, 1550nm)， SLD（1310nm）， DFB（1550nm/1310nm）, Hybrid Photonic Packaging
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Janhoo Semiconductor Optical Amplifier Chips G=20dB

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Tianjin Janhoo Optoelectronics Co., Ltd.

City: tianjin

Province/State:tianjin

Country/Region:china

Tel:86-176-9546-8303

Contact Person:
Ms.Chen View Contact Details

Janhoo Semiconductor Optical Amplifier Chips G=20dB

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Place of Origin CHINA
Brand Name JANHOO
Model Number JSA-C3112G20
Price $480.00/pieces 1-9 pieces
Packaging Type full packed
Function SOA chips are all produced in China with independent process control, Consistent with the structure and size of mainstream SOA manufacturers Strong compatibility
Application SOA in butterfly or small box package for optical amplification of 40G/100G high-speed services, Integrated in ROSAs for 100G optical modules to improve optical power budgets, Silicon photonic integration in products to compensate for transmission loss of
Operating Temperature Min -40, Max 80
Type SOA Semiconductor Optical Amplifier Chips, Semiconductor Optical Amplifier Chips, SOA Chip
Package / Case Chip
Voltage - Supply 250mA
Series 1310nm SOA Semiconductor Optical Amplifier Chips
Features Cost-effective short lead time and rapid iteration
Mounting Type Consistent with the structure and size of mainstream SOA manufacturers Strong compatibility
Size / Dimension details in below
Description SOA Chip
Manufacturing Date Code 20231112
Manufacturer JHBF/ Janhoo
WeChat 15110138935
Product Name SOA Chips
Style professional
Quality 100% Original 100% Brand
Detailed Product Description

Product Features

  • SOA chips are all produced in China, with independent process control
  • Consistent with the structure and size of mainstream SOA manufacturers, strong compatibility
  • Cost-effective, short lead time, fast delivery, customisation and rapid iteration

Product Applications

  • SOA in butterfly or small box package for optical amplification of 40G/100G high-speed services
  • Integrated in ROSAs for 100G optical modules to improve optical power budgets
  • Silicon photonic integration in products to compensate for transmission loss of 1310nm optical signals

Typical Characteristics

Product Specifications (Chip Temperature @ 25°C)

Structure Dimensions (mm)

 
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