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Shenzhen Retechip Electronics Co., Ltd
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fga25n120antd igbt power transistor

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang
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fga25n120antd igbt power transistor

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FGA25N120ANTD Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchild’s AND series of IGBTs ... 2024-12-09 22:06:54
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of ... 2024-12-09 22:06:54
IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop ... 2024-12-09 22:06:54
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar ... 2024-12-09 22:06:54
FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new ... 2024-12-09 22:06:54
... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module ... 2024-12-09 23:34:13
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new ... 2024-12-09 22:06:54
... discrete with anti-parallel diode in TO-247 package Infineon 1200V Gen8 IGBTs feature trench gate field stop technology delivered in industry ... 2024-12-09 22:06:54
...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter ... 2024-12-09 22:06:54
...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic ... 2024-12-09 22:06:54
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