TK13A60D TOSHIBA Field Effect Transistor
|
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A. The π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through hole packages, and compact DPAK-3 and PW-Mold-3 surface mount packages.
Features Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Specifications
Trading Guide
|
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Product Tags: TK13A60D Field Effect Transistor TK13A60D field emission transistor |
![]() |
IRFP9240PBF P-Channel MOSFET 200V 12A 500 mOhms TO-247-3 Transistors |
![]() |
BTB04-600SL Triacs 4 Amp 600 Volt - 40℃ To + 125℃ TO-220-3 Transistors |
![]() |
N-Channel MOSFET IRFP4668PBF Transistor 130 A 200 V 520W 9.7 MOhms TO-247AC |
![]() |
IRFP064NPBF N-Channel Mosfet 55V 98A 8mOhm 113.3nCAC TO-247-3 |
![]() |
NVMTS1D2N08H 80V 337A 1.1mOhms DFNW-8 AEC-Q101 N-Channel MOSFET |
![]() |
RURG8060 Switching Diode 80A 600V General Purpose Power Switching npn and pnp transistor |