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reliable power solution mosfet power electronics
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... 7.3 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 20 V FET Feature - Power Dissipation (Max) 3.5W (Ta), 28W (Tc)
2024-12-09 22:29:06
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...MOSFET Power Electronics for Advanced Applications N-Channel DUAL COOL 33 30 V 157 A 1.28 m Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Single N-Channel SO-8 FL 30 V 46 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) ...
2024-12-09 22:29:06
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...) @ Id 2.4V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V FET Feature - Power Dissipation (Max) 420mW (Ta) Operating ...
2024-12-09 22:29:06
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... 2.5V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating ...
2024-12-09 22:29:06
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...MOSFET power electronics device. This device is designed to provide high levels of efficiency and performance, making it ideal for a variety of ...
2024-12-09 22:29:06
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IRF9520NPBF MOSFET Power Electronics Product Features: • N-Channel Enhancement Mode • Avalanche-Rated • Logic Level Gate Drive • Low Gate Charge • Low ...
2024-12-09 22:29:06
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... V • On-Resistance Rds(on): 0.14 Ohm • Input Capacitance (Ciss) @ Vds: 236 pF @ 10V • Operating Temperature: -55°C ~ 175°C • Power Dissipation: 4...
2024-12-09 22:29:06
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... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
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Product Listing: IRF7832TRPBF MOSFET Product Type: MOSFET Brand: IRF Model: IRF7832TRPBF Package: TO-263 VDS(V): 30V ID (A): -3A RDS(on)(Ω): 0.04Ω VGS ...
2024-12-09 22:28:51
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