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reliable power solution mosfet power electronics
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...MOSFET Ideal for Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low ...
2024-12-09 22:28:51
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... • Power - Max: 320W • Operating Temperature: -55°C to 175°C (TJ) • Mounting Type: Through Hole • Package / Case: TO-220AB Why buy from us >>> Fast ...
2024-12-09 22:29:06
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Product: BSS131H6327XTSA1 N-Channel MOSFET Parameters: Drain-Source Voltage: -60V Continuous Drain Current: -1.7A RDS(on): 0.08Ω Gate-Source Voltage: ...
2024-12-09 22:29:06
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Product Listing: IRFB4310ZPBF - N-Channel MOSFET Parameters: • Drain-Source Voltage (Vdss): 400V • Drain-Source On-Resistance (Rds): 0.018Ω • Current ...
2024-12-09 22:29:06
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...MOSFET Power Electronics 4.4 Amps 20 Volts P−Channel TSOP−6 Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) ...
2024-12-09 22:29:06
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... 12 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 10 V FET Feature - Power Dissipation (Max) 1.6W (Ta)
2024-12-09 22:29:06
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...MOSFET Power Electronics Module Single P-Channel WDFN8 -100 V 120 m -13 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25...
2024-12-09 22:29:06
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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 24 V FET Feature - Power Dissipation (Max) 840mW (Ta)
2024-12-09 22:29:06
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... 20 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 16 V FET Feature - Power Dissipation (Max) 8.3W (Ta)
2024-12-09 22:29:06
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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 15 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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