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IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): ...
2024-12-09 22:28:51
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...MOSFET High Performance Power Electronics for Improved Efficiency Features: - 100V Drain-Source Breakdown Voltage - 175A Continuous Drain Current ...
2024-12-09 22:28:51
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... Specifications: • Drain-Source Voltage: -100V • Drain Current-Continuous: -44A • Gate-Source Voltage: -20V • Power Dissipation: -68W • Operating ...
2024-12-09 22:28:51
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...MOSFET Power Electronics for High-Performance Applications Features: • Low on-resistance RDS(on): 7.8mΩ (max) • Fast switching • Low gate charge • ...
2024-12-09 22:28:51
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... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage ...
2024-12-09 22:28:51
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IRFBG30PBF MOSFET High Performance Power Electronics for Optimal Efficiency Description: The IRFBG30PBF is a high-performance N-Channel enhancement...
2024-12-09 22:28:51
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...MOSFET for Power Electronics Applications Features: • Low Gate Charge Qg • Low Total Gate Charge Qgd • Fast Switching • Excellent On-State R DS(on) ...
2024-12-09 22:28:51
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...Power MOSFET Parameters: • Drain-Source Voltage: 100V • Drain-Gate Voltage: 100V • Gate-Source Voltage: ±20V • Continuous Drain Current: 48A • ...
2024-12-09 22:28:51
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Product Listing: IRF7749L1TRPBF MOSFET Features: • N-Channel Enhancement Mode • Ultra Low On-Resistance • Low Gate Charge • Fast Switching • Lead-Free...
2024-12-09 22:28:51
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...MOSFET for Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output Capacitance: 790pF -Typical Gate ...
2024-12-09 22:28:51
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