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reliable power solution mosfet power electronics
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...MOSFET Power Electronics High Power High Efficiency Switching Features: • N-Channel Enhancement Mode • Low On-Resistance RDS(on) • Fast Switching ...
2024-12-09 22:28:51
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...-Source Voltage: 500V • Continuous Drain Current: 7.5A • Drain-Source On-Resistance: 0.028Ω • Gate-Source Voltage: ±20V • Power Dissipation: 16W • ...
2024-12-09 22:28:51
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SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage ...
2024-12-09 22:28:51
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... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through ...
2024-12-09 22:28:51
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...MOSFET Power Electronics Package for High Power Applications N-Channel 30 V 3.5A (Ta) 500mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)
2024-12-09 22:29:06
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...) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V FET Feature - Power Dissipation (Max) 329mW (Ta)
2024-12-09 22:29:06
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...Power Module - High Power High Voltage High Speed Reliability Product Listing: IRGS10B60KDTRRP IGBT Power Module This IGBT power module is designed ...
2024-12-09 22:29:41
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IRFP4368PBF MOSFET, N-Channel, 55V, 95A, 4.8mOhm, TO-247 Product Description: The IRFP4368PBF is an N-Channel Power MOSFET designed for use in high ...
2024-12-09 22:28:51
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Product Listing Product Name: IRF5210PBF N-Channel MOSFET Features: • N-Channel MOSFET • Low Input Capacitance • Low Gate Charge • Fast Switching ...
2024-12-09 22:28:51
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