501 - 510 of 2223
power heater temperature transducer
Selling leads
|
.... The device is rated for a breakdown voltage of 200V, a drain-source voltage of 100V, and a drain current of 27A. It also features a maximum ...
2024-12-09 22:29:06
|
|
...Power Electronics Features: - Low RDS(on) for high efficiency - Low gate charge for high switching performance - High current capability and low ...
2024-12-09 22:29:06
|
|
...: • Drain-Source Voltage: 100V • Gate-Source Voltage: ±20V • Drain Current: 45A • Continuous Drain Current: 45A • Power Dissipation: 120W • ...
2024-12-09 22:29:06
|
|
...Power MOSFET • Product Type: N-Channel Power MOSFET • Part Number: IRFZ44NPBF • Drain-Source Voltage: 55V • Continuous Drain Current: 27A • RDS-on ...
2024-12-09 22:29:06
|
|
...Power MOSFET Features: -High voltage capability: VDSS = 400V -Low on-resistance: RDS(ON) = 0.3 Ohm -Low gate charge: Qg = 3.2nC -Low drain-source ...
2024-12-09 22:29:06
|
|
Product Listing: IPD096N08N3GATMA1 MOSFET Power Electronics Parameters: • Voltage: 900V • Power: 40A • RDSon: 0.0096 Ohm • Type: N-Channel • Package: ...
2024-12-09 22:29:06
|
|
... Capacitance (Ciss) @ Vds: 1550pF • Power - Max: 75W • Operating Temperature Range: -55°C to 175°C • Mounting Type: Surface Mount • Package / Case: ...
2024-12-09 22:29:06
|
|
...Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: ...
2024-12-09 22:29:06
|
|
...: 60V • Continuous Drain Current: -11A • Power Dissipation: 4.5W • Operating Junction Temperature: -55°C to 175°C • On Resistance RDS(ON): 0.042Ω • ...
2024-12-09 22:29:06
|
|
Product Listing: IPD60R1K0CEAUMA1 MOSFET Power Electronics Product Parameters: • Voltage Rating: 600V • Current Rating: 1A • Power Dissipation: 2.6W • ...
2024-12-09 22:29:06
|