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low gate charge mosfet power electronics
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... Drain Current (ID): 6A - RDS(ON): 0.0075Ω - Gate Threshold Voltage (VGS): 4V - Gate Charge (Qg): 5.2nC - Operating Temperature Range: -55°C to 150...
2024-12-09 22:29:06
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...Rectifier. This MOSFET is designed with a low gate-source resistance, enabling low power loss and improved switching performance. The IRFS4410ZTRLP...
2024-12-09 22:28:51
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...MOSFET The AO3423 is a N-Channel enhancement mode MOSFET designed for use in a wide range of applications. It is designed to provide excellent RDS...
2024-12-09 22:29:06
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...Specified PowerTrench MOSFET–20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0...
2024-12-09 22:29:06
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...MOSFET Power Electronics High Power Switching at Low Losses Description: The IRF730PBF is a fast switching N-channel power MOSFET designed for high...
2024-12-09 22:28:51
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... Cell Design - Low Gate Charge - Low Input and Output Capacitance - Low Crss - Lead Free, RoHS Compliant Parameters: - Drain Source Voltage (VDS): ...
2024-12-09 22:28:51
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...MOSFET Power Electronics High Performance Reliable Power Control Product Features: - N-Channel Enhancement Mode - Ultra Low On-Resistance - High ...
2024-12-09 22:28:51
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...MOSFET Power Electronics Features: - Low on-resistance:RDS(on) is only 450mΩ - High current capability: ID=19A - Low gate charge: Qg=7.2nC - Low ...
2024-12-09 22:29:06
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...: - Drain-Source Voltage (Vds): 600V - Drain Current (Id): 22A - Drain-Source On-State Resistance (Rds): 0.026ohm - Gate-Source Voltage (Vgs): ±20V ...
2024-12-09 22:29:06
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... packages. This device is ideal for applications requiring fast switching, low on-resistance, and low gate charge. Parameters: • Drain-Source ...
2024-12-09 22:29:06
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