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high performance rf power transistors
Selling leads
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...Power Electronics High Quality Low Power Dissipation Excellent Switching Performance Product Features: • Low on-resistance • High peak current ...
2024-12-09 22:28:51
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... gate charge, and fast switching performance. The device is also rated for a maximum drain current of 30A and a maximum drain-source on-state ...
2024-12-09 22:29:06
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...Power MOSFETs Description: The IRFB7430PBF is a 100V, single N-channel HEXFET power MOSFET designed for use in high-performance applications such ...
2024-12-09 22:28:51
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... MOSFET Power Electronics High Performance Switching and Controlling Solution Product Description: The IRFU9024NPBF is a N-channel enhancement mode ...
2024-12-09 22:28:51
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...low on-state resistance, high switching speed, and good thermal management characteristics. This device is suitable for use in a variety of power ...
2024-12-09 22:29:06
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...High Power MOSFET Transistor Product Parameters: Type: N-Channel MOSFET VDS (Max): 55V ID (Max): 42A RDS(on) (Max): 8.0 mOhm Gate Threshold Voltage ...
2024-12-09 22:28:51
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...High-Performance Power Electronics Solution for High Current Applications Parameters: • Package: TO-220 • Transistor Type: N-Channel • Vds – Drain...
2024-12-09 22:29:06
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...Continuous Drain Current (ID): 5.5A 4. On-State Resistance (RDS(on)): 0.84Ω 5. Power Dissipation (PD): 9.2W 6. Operating Temperature: -55°C to 150...
2024-12-09 22:28:51
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IRFI4019H-117P MOSFET Power Electronics High Performance Low On Resistance Product Overview: The IRFI4019H-117P MOSFET is an N-channel enhancement ...
2024-12-09 22:29:06
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...High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated ...
2024-12-09 22:28:51
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