IRFP90N20DPBF MOSFET: High Power Low On-Resistance High Speed Switching
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Product Listing: IRFP90N20DPBF, N-Channel Enhancement Mode Field Effect Transistor Features: - Ultra Low On-Resistance - Fast Switching - 100% Avalanche Tested - 175°C Operating Temperature Absolute Maximum Ratings: - Drain-Source Voltage: 100V - Gate-Source Voltage: ±20V - Continuous Drain Current: 18A - Pulsed Drain Current: 72A - Power Dissipation: 320W Thermal Characteristics: - Thermal Resistance, Junction-to-Case: 1.5°C/W - Thermal Resistance, Junction-to-Ambient: 40°C/W Electrical Characteristics: - Drain-Source Breakdown Voltage: 100V - Gate Threshold Voltage: 3V - On-State Drain Current: 20A - On-State Resistance: 0.015 Ohms Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components
.Our branches office include China, Hong Kong, Sigapore , Canada .
Offer business, service, resourcing and information for our global
member. How to buy >>> • Contact us by email & sent your inquire with your Transport
destination . Service >>> • Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer
don`t need to worry about shipping problem
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