IPP023N10N5 MOSFET Power Electronics High Performance Low On-Resistance, High Current Capability
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Product Name: N-Channel Enhancement Mode MOSFET
Product Model: IPP023N10N5
Parameter:
Drain-Source Voltage: 100V
Continuous Drain Current: 23A
Pulsed Drain Current: 115A
Maximum Drain Source On-State Resistance: 0.0081Ω
Gate-Source Voltage: ±20V
Power Dissipation: 7.5W
Operating Temperature Range: -55~150℃
Package Type: TO-220
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