FQD16N25CTM Mosfet Transistor N Channel 25V 16A TO-220F-3L Package

Product Listing:

FQD16N25CTM MOSFET Power Electronics

Features:

• Low RDS(on) for high efficiency
• Ultra low Qg and Qgd for fast switching
• Low threshold voltage (Vth) for low power consumption
• Low gate charge (Qg) for high frequency operation
• Low thermal resistance (Rth) for high power dissipation
• Available in a wide range of surface mount packages

Parameters:

• Drain-Source Voltage (VDS) : 25V
• Drain-Source Current (ID) : 16A
• Gate-Source Voltage (VGS) : 10V
• Continuous Drain Current (ID): 16A
• Drain-Source On-State Resistance (RDS(on)): 0.0056 Ohm
• Power Dissipation (PD): 43W
• Operating Temperature Range: -55°C to +150°C
• Maximum Junction Temperature: 175°C

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