FDMS86FDMS6673BZ Mosfet Transistor Ideal For High Reliability Applications

Fairchild Semiconductor FDMS6673BZ N-Channel MOSFET Power Electronics

Product Description:

The FDMS6673BZ is an N-channel enhancement mode power field-effect transistor designed for high-speed switching applications. This MOSFET features low gate charge and low on-state resistance, making it ideal for high efficiency power management applications.

Product Features:

• N-Channel Enhancement Mode Power Field-Effect Transistor
• Low Gate Charge
• Low On-State Resistance
• High-Speed Switching
• High Efficiency Power Management
• Very Low Input Capacitance
• High Voltage Rating
• RoHS Compliant

Product Specifications:

• VDSS: 30V
• ID: 9.5A
• RDS(on): 0.59Ω
• Max Power Dissipation: 13.5W
• Gate-Source Voltage: ±20V
• Operating Temperature Range: -55°C to +150°C
• Package/Case: TO-220-3

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